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Jpn. J. Appl. Phys. 23 (1984) pp. L280-L282  |Next Article|  |Table of Contents|
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Letter

Highly Conductive and Transparent Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering

Tadatsugu Minami, Hidehito Nanto and Shinzo Takata

Department of Electrical Engineering, Kanazawa Institute of Technology

(Received February 20, 1984; accepted for publication April 21, 1984)

Highly conductive films of Al-doped ZnO have been prepared by rf magnetron sputtering of a ZnO target with Al₂O₃ dopant of 1–2 wt% in content added. Films with resistivity as low as 2×10^-4 Ωcm and transmittance above 80% at the wavelength between 400 and 800 nm can be produced on low temperature substrate with a relatively high deposition rate. It is shown that a stable resistivity for use in various ambients at high temperature can be attained for the films. The characteristic features of Al-doped ZnO films are their high carrier concentration and low mobility in comparison with non-doped ZnO films.

URL:http://jjap.jsap.jp/link?JJAP/23/L280/
DOI: 10.1143/JJAP.23.L280

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References | Citing Articles (140)

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2. J. B. Webb, D. F. Williams and M. Buchanan: Appl. Phys. Lett. 39 (1981) 640[AIP Scitation].
3. T. Minami, H. Nanto and S. Takata: Appl. Phys. Lett. 41 (1982) 958[AIP Scitation].
4. K. Ito and T. Nakazawa: Jpn. J. Appl. Phys. 22 (1983) L245[JSAP].
5. T. Minami, H. Nanto, S. Shooji and S. Takata: Thin Solid Films 111 (1984) 167[CrossRef].
6. H. Nanto, T. Minami, S. Shooji and S. Takata: J. Appl. Phys. 55 (1984) 1029[AIP Scitation].
7. A. P. Roth, J. B. Webb and D. F. Williams: Solid State Commun. 39 (1981) 1269[CrossRef].

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